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dc.contributor.advisorMominuzzaman, Dr. Sharif Mohammad
dc.contributor.authorPavel, Md. Reaz Haider
dc.date.accessioned2016-01-26T15:06:10Z
dc.date.available2016-01-26T15:06:10Z
dc.date.copyright2015
dc.date.issued2015
dc.identifier.otherID 11221050
dc.identifier.otherID 11121055
dc.identifier.otherID 11221033
dc.identifier.urihttp://hdl.handle.net/10361/4958
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.en_US
dc.descriptionCataloged from PDF version of thesis report.
dc.descriptionIncludes bibliographical references (page 83-90).
dc.description.abstractThe need for technological progression in the field of electronics has been persistently escalating. So far silicon has been the most important fabrication material of preference for meeting the current demands. However, silicon itself has few of its own limitations; Silicon based integrated circuits and the scaling of silicon MOSFET design faces complications like tunneling effect, gate oxide thickness effect etc. which has given the extensive perimeter for new materials with improved characteristics to emerge. In up to date periods, graphene and carbon nanotube have shown huge promise as materials that can swap silicon-based materials in the future due to their outstanding electrical properties and other characteristics. Simulation studies of graphene nanoribbon field-effect transistors (GNRFETs) and carbon nanotube field-effect transistors (CNTFETs) at different contact temperatures are presented in this thesis paper using models that have been methodically developed and are of increasing thoroughness and versatility. This thesis covers the studies and modeling of graphene nanoribbon and carbon nanotube, which includes band structures and current-voltage graphical plots. Also, an analysis has been presented which shows the effect by varying contact temperatures for relative dielectric constant and chirality on the device performance, in particular on the drain current. The purpose of this paper is to the study behaviour of graphene nanoribbon transistors and carbon nanotube transistors. The simulation is carried out using NanoTCAD ViDES program and the main focus is on the changes in the I-V characteristic curves for transfer and output characteristics for relative dielectric constant and chirality for different contact temperatures. The obtained results were used to make a comparative analysis of the device performance of GNRFET and CNTFET. We confirmed our work by contrasting of our results with other recognized academic papers published under the same category.en_US
dc.description.statementofresponsibilityMd. Reaz Haider Pavel
dc.description.statementofresponsibilityMd. Zishan Ibne Hussain
dc.description.statementofresponsibilityA.B.M. Rakibul Ahsan
dc.format.extent155 pages
dc.language.isoenen_US
dc.publisherBRAC Universityen_US
dc.rightsBRAC University Internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subjectElectrical and electronic engineeringen_US
dc.subjectFETen_US
dc.titleStudy of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applicationsen_US
dc.typeThesisen_US
dc.contributor.departmentDepartment of Electrical and Electronic Engineering, BRAC University
dc.description.degreeB. Electrical and Electronic Engineering


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