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dc.contributor.authorKhan, Sabbir Ahmed
dc.contributor.authorHasan, Md. Rakibul
dc.contributor.authorMominuzzaman, Sharif Mohammad
dc.identifier.citationKhan, S. A., Hasan, M., & Mominuzzaman, S. M. (2014). Investigation of CNTFET performance with gate control coefficient effect. Journal of Nano- and Electronic Physics, 6(2)en_US
dc.descriptionThis article was published in Journal of Nano- and Electronic Physics [© 2014 Sumy State University] The article website is at:
dc.description.abstractFor the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.en_US
dc.publisher© 2014 Sumy State Universityen_US
dc.subjectDrain currenten_US
dc.subjectGate control coefficienten_US
dc.titleInvestigation of CNTFET performance with gate control coefficient effecten_US
dc.contributor.departmentDepartment of Computer Science and Engineering, BRAC University

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