Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
Publisher© 2015 Institute of Electrical and Electronics Engineers Inc.
AuthorAhmed, Sheikh Ziauddin
Shawkat, Mashiyat Sumaiya
Chowdhury, Md Iramul Hoque
Mominuzzaman, Sharif Mohammad
MetadataShow full item record
CitationZiauddin Ahmed, S., Shawkat, M. S., Chowdhury, M. I. H., & Mominuzzaman, S. M. (2015). Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant. Paper presented at the 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, 384-387. doi:10.1109/NEMS.2015.7147449
Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material issues which hinder the development of transistor technology. In this paper, the effect of relative dielectric constant on the performances of ballistic schottky barrier Graphene Nanoribbon field-effect transistor (GNRFET) and Carbon Nanotube field-effect transistor (CNTFET) is studied and a comparative analysis between the two transistors is provided. It has been observed that using a gate material with higher relative dielectric constant leads to a higher on-state drain current for both the transistors. However, CNTFET has higher on-state drain current compared to GNRFET. Also in this literature, the on and off-state current ratios of both the transistors are calculated and plotted to further differentiate between the performances of GNRFET and CNTFET.