Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
Publisher© 2015 Institute of Electrical and Electronics Engineers Inc.
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CitationMondol, R. K., Hassan, A., & Hasan, R. (2015). Quantum capacitance in strained armchair graphene nanoribbon considering edge effect. Paper presented at the Proceedings of 2015 IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015, doi:10.1109/ICECCT.2015.7225950
Armchair Graphene nanoribbons(A-GNRs) are now widely used in nanoscale transistor because of its semiconducting behavior and fast switching speed. The most important parameter which impedes carrier movement through the channel is 'capacitance' after its sustainable value. Earlier classical capacitance was assumed as only one of the capacitance in nanoscale transistor. But when the device is operated by a source; classical capacitance goes in vain for overall observing the carrier statistics. Here another capacitance must be considered which 'Quantum capacitance' is. Edge effect which is caused during fabrication for the deviation of true structure. In previous literature, it is quantum capacitance calculated by considering edge effect only.But another phenomena is also appeared when GNR is subjected to a considerable strain in fabrication. In this paper we will calculate bandgap, energy , quantum capacitance and gate delay by considering strained A-GNR for corresponding source voltage.