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Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy

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dc.contributor.authorHasan, Rifat
dc.contributor.authorHassan, Asif S.
dc.contributor.authorAbedin, Minhaz Ibna
dc.contributor.authorMondol, Raktim Kumar
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2016-11-27T06:01:14Z
dc.date.available2016-11-27T06:01:14Z
dc.date.issued2015
dc.descriptionThis conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http:// 10.1109/ICECCT.2015.7225948en_US
dc.description.abstractSilicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But before using it as a material in a device, some electronic properties have to be investigated. In silicone, the charge carrier behaves like massless dirac fermion. For this, quantum study is very necessary and mandatory. In this paper, we will observe the quantum capacitance and the quantum hall effect for corresponding Fermi energy level for different spin coupling strength and applied electric energy.en_US
dc.description.versionPublished
dc.identifier.citationHasan, R., Hassan, A., Abedin, M. I., & Mondol, R. K. (2015). Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy. Paper presented at the Proceedings of 2015 IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015, doi:10.1109/ICECCT.2015.7225948en_US
dc.identifier.doi10.1109/ICECCT.2015.7225948
dc.identifier.isbn978-147996084-2
dc.identifier.urihttp://hdl.handle.net/10361/6977
dc.language.isoenen_US
dc.publisher© 2015 Institute of Electrical and Electronics Engineers Inc.en_US
dc.relation.urihttp://ieeexplore.ieee.org/document/7225948/
dc.subjectEnergyen_US
dc.subjectFermi energyen_US
dc.subjectQuantum hall effecten_US
dc.subjectSiliceneen_US
dc.titleAnalysis of quantum capacitance and quantum hall effect of silicene for different fermi energyen_US
dc.typeConference Paperen_US

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