Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy
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© 2015 Institute of Electrical and Electronics Engineers Inc.
Citation
Hasan, R., Hassan, A., Abedin, M. I., & Mondol, R. K. (2015). Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy. Paper presented at the Proceedings of 2015 IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015, doi:10.1109/ICECCT.2015.7225948
Abstract
Silicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But before using it as a material in a device, some electronic properties have to be investigated. In silicone, the charge carrier behaves like massless dirac fermion. For this, quantum study is very necessary and mandatory. In this paper, we will observe the quantum capacitance and the quantum hall effect for corresponding Fermi energy level for different spin coupling strength and applied electric energy.
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Description
This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http:// 10.1109/ICECCT.2015.7225948
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Conference Paper