Analysis of NCFET with Si doped HfO2 as ferro-electric material to achieve lower SS

Abstract

By using ferroelectric material as gate insulator in MOSFET (NCFET), Sub-Threshold Swing can be reduced below the fundamental limit of 60mV per decade. Achieving the negative capacitance depends on the ability to drive ferro- electricity away from its local minimum to non-equilibrium state which is very unstable. It can be stabilized by adding a series capacitance. Hence, a ferroelectric capacitor in a series connection with a channel capacitor can be made to model a ferroelectric MOS capacitor to get a steeper Id-Vgs curve than a regular MOSFET.