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An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

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bracu.degree.levelUndergraduate
bracu.type.groupStudent Works
datacite.rightsOpen Access
dc.contributor.advisorDas, Avijit
dc.contributor.authorSaif, Omar
dc.contributor.authorPavel, Md. Fazle Rabbi
dc.contributor.authorHasan, Md. Akib
dc.contributor.authorShah, Asif
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2017-12-19T05:11:28Z
dc.date.available2017-12-19T05:11:28Z
dc.date.copyright2017
dc.date.issued8/20/2017
dc.descriptionCataloged from PDF version of thesis.
dc.descriptionIncludes bibliographical references (page 72).
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.en_US
dc.description.abstractThe IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new physical-base model for a punch though (PT) IGBT. By manipulating the different region length, depth and doping we will try to obtain better threshold and I-V relation regarding IGBT characteristics and make a new extended model with proper research on its transient characteristics.en_US
dc.description.degreeBachelor of Science in Electrical and Electronic Engineering
dc.description.statementofresponsibilityOmar Saif
dc.description.statementofresponsibilityMd. Fazle Rabbi Pavel
dc.description.statementofresponsibilityMd. Akib Hasan
dc.description.statementofresponsibilityAsif Shah
dc.format.extent102 pages
dc.identifier.otherID 13121051
dc.identifier.otherID 13121069
dc.identifier.otherID 13121100
dc.identifier.otherID 14221027
dc.identifier.urihttp://hdl.handle.net/10361/8640
dc.language.isoenen_US
dc.publisherBRAC Universityen_US
dc.rightsBRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subjectIGBTen_US
dc.subjectMOSFET structureen_US
dc.subjectPunch Through (PT)en_US
dc.subjectbipolar Junction Transistor (BJT).en_US
dc.titleAn extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristicsen_US
dc.typeThesisen_US

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Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)