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An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

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Files

13121051,13121069,13121100,14221027_EEE.pdf (2.33 MB)

Date

8/20/2017

Publisher

BRAC University

Authors

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URI

http://hdl.handle.net/10361/8640

Citation

Abstract

The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new physical-base model for a punch though (PT) IGBT. By manipulating the different region length, depth and doping we will try to obtain better threshold and I-V relation regarding IGBT characteristics and make a new extended model with proper research on its transient characteristics.

Keywords

IGBT, MOSFET structure, Punch Through (PT), bipolar Junction Transistor (BJT).

Description

Cataloged from PDF version of thesis.
Includes bibliographical references (page 72).
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

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Department

Department of Electrical and Electronic Engineering

Type

Thesis

Collections

Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)