Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons

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bracu.type.groupResearch Publications
datacite.rightsMetadata Only
dc.contributor.authorSaha, Gobinda
dc.contributor.authorSaha, Atanu Kumar
dc.contributor.authorHarun-Ur Rashid, A.B.M.
dc.contributor.departmentBRAC University
dc.date.accessioned2026-07-26T09:08:58Z
dc.date.available2026-07-26T09:08:58Z
dc.date.issued2015-01-01
dc.description.abstractIn this paper double quantum well resonant tunneling negative differential resistance (NDR) device based on intrinsic armchair graphene nanoribbon (A-GNR) is proposed. Non-equilibrium Green's function (NEGF) based transport equation was coupled with Poisson's equation to obtain the desired device characteristics. This device shows promising results including the NDR effect at very low bias, at 0.12V, with peak current of 1.78?A and peak to valley current ratio (PVCR) of ?20. We further show that the device performance has strong dependence on back gate voltage.
dc.description.versionPublished
dc.format.extent440-443
dc.identifier.citationG. Saha, A. K. Saha and A. B. M. Harun-ur Rashid, "Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons," 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, 2015, pp. 440-443, doi: 10.1109/NANO.2015.7388632.
dc.identifier.doi10.1109/NANO.2015.7388632
dc.identifier.issn9781467381550
dc.identifier.other2-s2.0-84964378575
dc.identifier.urihttps://hdl.handle.net/10361/28642
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.hasversion10.1109/NANO.2015.7388632
dc.relation.ispartofIEEE Nano 2015 15th International Conference on Nanotechnology
dc.relation.ispartofseriesIEEE Nano 2015 15th International Conference on Nanotechnology
dc.relation.urihttps://ieeexplore.ieee.org/document/7388632
dc.rightsfalse
dc.subjectGraphene nanoribbon
dc.subjectNDR
dc.subjectNEGF
dc.subjectQuantum well
dc.subjectResonant tunneling
dc.subject.lcshNanotechnology.
dc.subject.lcshIndustrial engineering.
dc.subject.lcshElectronic circuits.
dc.subject.lcshQuantum wells.
dc.subject.lcshField-effect transistors.
dc.titleDouble quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons
dc.typeConference Proceeding
person.affiliation.nameBangladesh University of Engineering and Technology
person.affiliation.nameBangladesh University of Engineering and Technology
person.affiliation.nameBangladesh University of Engineering and Technology
person.identifier.scopus-author-id55843369600
person.identifier.scopus-author-id55635069100
person.identifier.scopus-author-id18435081900

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