Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons

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Date

2015-01-01

Publisher

Institute of Electrical and Electronics Engineers Inc.

Authors

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URI

https://hdl.handle.net/10361/28642

Citation

G. Saha, A. K. Saha and A. B. M. Harun-ur Rashid, "Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons," 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, 2015, pp. 440-443, doi: 10.1109/NANO.2015.7388632.

Abstract

In this paper double quantum well resonant tunneling negative differential resistance (NDR) device based on intrinsic armchair graphene nanoribbon (A-GNR) is proposed. Non-equilibrium Green's function (NEGF) based transport equation was coupled with Poisson's equation to obtain the desired device characteristics. This device shows promising results including the NDR effect at very low bias, at 0.12V, with peak current of 1.78?A and peak to valley current ratio (PVCR) of ?20. We further show that the device performance has strong dependence on back gate voltage.

Keywords

Graphene nanoribbon, NDR, NEGF, Quantum well, Resonant tunneling

LC Subject Headings

Nanotechnology., Industrial engineering., Electronic circuits., Quantum wells., Field-effect transistors.

Description

Publisher Link

https://ieeexplore.ieee.org/document/7388632

DOI

10.1109/NANO.2015.7388632

Department

BRAC University

Type

Conference Proceeding

Collections

Scholarly Indexed Publications