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    Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
    (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015) Ahmed, Sheikh Ziauddin; Shawkat, Mashiyat Sumaiya; Chowdhury, Md Iramul Hoque; Mominuzzaman, Sharif Mohammad; Department of Electrical and Electronic Engineering
    Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material issues which hinder the development of transistor technology. In this paper, the effect of relative dielectric constant on the performances of ballistic schottky barrier Graphene Nanoribbon field-effect transistor (GNRFET) and Carbon Nanotube field-effect transistor (CNTFET) is studied and a comparative analysis between the two transistors is provided. It has been observed that using a gate material with higher relative dielectric constant leads to a higher on-state drain current for both the transistors. However, CNTFET has higher on-state drain current compared to GNRFET. Also in this literature, the on and off-state current ratios of both the transistors are calculated and plotted to further differentiate between the performances of GNRFET and CNTFET.
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    Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device
    (© 2016 Institute of Electrical and Electronics Engineers Inc., 2015) Shakil, Shifur Rahman; Ahmed, Sheikh Ziauddin; Department of Electrical and Electronic Engineering
    Sensing properties and quasi conductivity of Graphene Armchair Nanoribbon/MoS2 heterostructure devices are investigated using Non Equilibrium Green's Function (NEGF) formalism. Both metallic and semiconducting Armchair Graphene Nanoribbon (A-GNR) are used as sensing medium, while two dimensional (2D) molybdenum disulfide (MoS2) is used as contacts. A comparative study about sensing performance of NH3 adsorbed pristine-, defect-, doped GNR and unadsorbed GNR has been carried out. The non-linear spin dependent transport properties of such devices have been studied on the basis of doping with an atom of group III & V elements. The effects of applied gate voltage over sensing properties have been observed extensively. Also in this literature, the effects of metal contacts are discussed and a new device model has been proposed to increase sensing properties.