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Complete analytical model of GaN MESFETs for high power and Microwave frequency applications

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dc.contributor.advisor Islam, Md. Shafiqul Shanta, Aysha Siddique Huq, Tasneem Rumman Hossain, Daraksha Binte Mahmood, Riaz 2012-04-08T10:45:43Z 2012-04-08T10:45:43Z 2011 2011-12
dc.identifier.other ID 09221146
dc.identifier.other ID 09221147
dc.identifier.other ID 09221149
dc.identifier.other ID 09221074
dc.description This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2011.
dc.description Cataloged from PDF version of thesis report.
dc.description Includes bibliographical references (page 116).
dc.description.abstract In the past few years, growing interest has been paid to the wide band gap materials such as GaN because of its low thermal generation rate and high breakdown field for its potential use in high power, high temperature and microwave frequency applications. The use of GaN based devices for efficient, linear high power RF amplifiers has already been grown for military applications. GaN Metal Semiconductor Field Effect Transistors (MESFETs) have received much attention as its structure is simpler to analyze than that of High Electron Mobility Transistors (HEMTs) and its epi-layers and the physical effects are easier to realize and interpret. Flourishing interest in exploiting the properties and performance of GaN based devices requires the development of simple physics-based analytical models to simplify the device parameter acquisition and to be able to use it for computer-aided design of GaN integrated circuits (ICs). Few analytical models on GaN MESFETs are reported, though significant experimental work is available. Therefore more analytical models should be developed to understand the device operation accurately. In this thesis, analytical one- and two-dimensional channel potential models are developed for long-channel GaN MESFETs based on the solution of Poisson’s equation. The developed analytical channel potential model can be used for short-channel MESFETs with some modifications and assumptions. Analytical models for I-V and C-V characteristics of GaN MESFET are also presented considering the effect of parasitic resistances and gate length modulation. The models evaluate the transconductance and optimum noise figure. The models developed in this thesis will be very helpful to understand the device behaviour in nanometer regime for future applications. en_US
dc.format.extent 116 pages
dc.language.iso en en_US
dc.publisher BRAC University en_US
dc.rights BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Electrical and electronic engineering
dc.title Complete analytical model of GaN MESFETs for high power and Microwave frequency applications en_US
dc.type Thesis en_US

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