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Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters

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dc.contributor.advisor Islam, Dr. Md.Shafiqul
dc.contributor.author Mostofa, Jobia
dc.contributor.author Ahmed, Wasi Uddin
dc.contributor.author Pia, Ummay Farha
dc.contributor.author Meghna, Tanzina Haque
dc.date.accessioned 2011-11-13T06:17:28Z
dc.date.available 2011-11-13T06:17:28Z
dc.date.copyright 2011
dc.date.issued 2011-08
dc.identifier.other ID 09221122
dc.identifier.other ID 09221145
dc.identifier.other ID 09221072
dc.identifier.other ID 09221136
dc.identifier.uri http://hdl.handle.net/10361/1455
dc.description This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2012. en_US
dc.description Cataloged from PDF version of thesis report.
dc.description Includes bibliographical references (page 42-43).
dc.description.abstract The Metal- Semiconductor Field-Effect-Transistor (MESFET) is used as a paragon in RF amplifier due to its lower stray capacitance and immense radiation hardness. It is imperative to develop rigorous IN characteristic models for nanometer size MESFETs. Therefore, we consider two types of MESFETs, GaAs and high-power SiC MESFETs. For nanometer size GaAs MESFETs, some existing models will be analyzed and by comparing all these models Ahmed et al. model [1] has been preferred and modified. An algorithm will be developed for the optimization of model parameters to predict the I-V characteristics of nanometer range GaAs MESFETs with different aspect ratios as well as for different bias conditions. The root mean square (RMS) error technique will be used to compare the models . An improved compact nonlinear DC I-V characteristic model will also be delineated for high-power SiC MESFETs . Due to their high thermal conductivity, the SiC devices dissipate larger power resulting an extensive rise in operating temperature . This self heating increases the crystal temperature and commences a negative differential conductance (NDC) because of the change in mobility of the device. An algorithm will also be developed to find out the optimum model parameters using RMS error method. The proposed models will be compared with the experimental results. The proposed models should be a useful tool for upcoming integrated circuits with GaAs and high-power SiC MESFETs. en_US
dc.description.statementofresponsibility Jabia Mostofa
dc.description.statementofresponsibility Wasi uddin Ahmed
dc.description.statementofresponsibility Ummay Farha Pia
dc.description.statementofresponsibility Tanzina Haque Meghna
dc.format.extent 55 pages
dc.language.iso en en_US
dc.publisher BRAC University en_US
dc.rights BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Electrical and Electronic Engineering
dc.title Analysis and development of I-V characteristics models for nanometer size MESFETs considering fabrication parameters en_US
dc.type Thesis en_US
dc.contributor.department Department of Electrical and Electronic Engineering, BRAC University
dc.description.degree B. Electrical and Electronic Engineering


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