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Transient switch-on collector current analysis in punch-through IGBT

dc.contributor.advisorDas, Avijit
dc.contributor.authorIslam, Md. Akhirul
dc.contributor.authorHossain, MD. Nazmul
dc.contributor.authorAltab, M. Mubaswir
dc.contributor.authorBhowmik, Tonmoy
dc.date.accessioned2017-08-21T07:43:45Z
dc.date.available2017-08-21T07:43:45Z
dc.date.copyright2017
dc.date.issued2017
dc.identifier.otherID 12121114
dc.identifier.otherID 12321066
dc.identifier.otherID 12321067
dc.identifier.otherID 12321068
dc.identifier.urihttp://hdl.handle.net/10361/8419
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.en_US
dc.descriptionCataloged from PDF version of thesis.
dc.description.abstractAnalysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT). Changing the Doping concentration, gate voltage and collector to emitter voltage along with different temperature in punch through IGBT we compared different collector currents.en_US
dc.description.statementofresponsibilityMd. Akhirul Islam
dc.description.statementofresponsibilityMD. Nazmul Hossain
dc.description.statementofresponsibilityM. Mubaswir Altab
dc.description.statementofresponsibilityTonmoy Bhowmik
dc.format.extent85 pages
dc.language.isoenen_US
dc.publisherBRAC Univeristyen_US
dc.rightsBRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subjectIGBTen_US
dc.subjectHefner modelen_US
dc.titleTransient switch-on collector current analysis in punch-through IGBTen_US
dc.typeThesisen_US
dc.contributor.departmentDepartment of Electrical and Electronic Engineering, BRAC University
dc.description.degreeB. Electrical and Electronic Engineering


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