Collections in this community
(© 2015 IEEE, 2015-11)This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation ...
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015-12)In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through ...