Saha, Atanu KumarAhmed, SaberSobhan, Rifat Binte2016-09-202016-09-2020168/17/2016ID 13121044ID 13121126http://hdl.handle.net/10361/6425Cataloged from PDF version of thesis report.Includes bibliographical references (page 46-47).This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.In this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).47 pagesenBRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.I-V CharacteristicsNegative Differential Resistance (NDR)Resonant Tunneling Diodes (RTD)Thesis