Haque, Md. AnamulRashid, ShahriarSobnom, SinthiaChowdhury, Mahadi HasanShamrose, Sanjana2018-12-202018-12-2020182018-08ID 13121035ID 13121047ID 13121164ID 12221098http://hdl.handle.net/10361/11037Catalogued from PDF version of thesis.Includes bibliographical references( page 32-33).This thesis is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2018.A necessity of new alternative for electronic devices are arising in which spin property of electron will be engaged for better energy efficiency. Combination of both ferromagnet and semiconductor materials opens the new era of efficiency though faces a challenging route. The spin valve transistor (SVT) is the first among such working hybrid devices which can be the eligible alternative of current semiconductor transistors. This review projects the basic science of spin valve transistor and how current semiconductor transistors are limited by new arising challenges.33 pagesenBRAC University theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.Performance evolutionSpin valveHybrid deviceTransistorFerromagnetSemiconductorThesis