Das, AvijitHasan, RifatulMustary, SharminBristy, Nigar Sultana2017-01-312017-01-3120164/19/2016ID 12121113ID 12121167ID 11321033http://hdl.handle.net/10361/7717Cataloged from PDF version of thesis report.Includes bibliographical references (page 72-74).This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Computer Science and Engineering, 2016.In many power converter applications, analysis of switching power loss of IGBT is considered desirable. In our thesis, the switching behavior is analyzed through investigation into transient anode voltage modeling of Non-Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT).Parabolic Profile for excess carrier concentration has been compared with the linear one in the baser. With the comparison, Transient turn-off anode voltage is analyzed through parabolic and linear approach. Finally transient switching power loss is estimated through the incorporation of transient current.105 pagesenBRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.IGBT transientSwitching powerNon-punch through (NTP)Thesis