Das, AvijitTania, ShoulinSaha, DiprajFaiza, Fahmida2017-02-092017-02-09201612/14/2016ID 12310008ID 12121123ID 12121036http://hdl.handle.net/10361/7734Cataloged from PDF version of thesis report.Includes bibliographical references (page 59-60).This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.To be considered as an efficient assistant, power semiconductor devices are being used in many power converter applications and technologies, particularly with high variable loads. In this regard, monitoring temperature of the device junction is indispensable. In this literature review, the characteristics of Non Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT) during the turn off state has been analyzed with the change in temperature in different carrier lifetimes. Moreover, the anode voltage, anode current, carrier charge and power loss characteristics of IGBT is shown by comparing the ideal linear model and parabolic model with temperature variance.75 pagesenBRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.TemperatureTransient characteristicsNPT IGBTParabolic modelThesis