Shanta, A.S.Hossain, D.B.Huq, T.R.Mahmood, R.Islam, M.S.2026-07-262026-07-262012-11-23A. S. Shanta, D. B. Hossain, T. R. Huq, R. Mahmood and M. S. Islam, "Analytical model of GaN MESFETs for high power and microwave frequency applications," 2012 International Symposium on Instrumentation & Measurement, Sensor Network and Automation (IMSNA), Sanya, China, 2012, pp. 28-31, doi: 10.1109/MSNA.2012.6324509.9781467324670https://hdl.handle.net/10361/28634A simple physics based model for Gallium Nitride (GaN) Metal Semiconductor Field Effect Transistor (MESFET) suitable for microwave frequency applications is presented. The developed analytical channel potential model can be used for short channel MESFETs with some modifications and assumptions. Analytical models for I-V characteristics, C-V characteristics, transconductance and optimum noise figure of GaN MESFET are presented. The effects of parasitic resistances and gate length modulation on these models have been studied. The models developed in this paper will be very helpful to understand the device behavior in nanometer regime for future applications.28-31en-USfalseAnalytical modelGaNMESFETMicrowave devices.Frequency synthesizers.Conference Proceeding10.1109/MSNA.2012.6324509