Bristy, Nigar SultanaMustary, SharminHasan, RifatulDas A.2026-08-182026-08-182017-04-26Charge carrier lifetime;Insulated gate bipolar transistors;Transient analysis;Switches;Anodes;Mathematical model;Predictive models;Switching Power Loss;Minority Carrier Lifetime;Parabolic Approximation;Transient Anode Voltage;Transient Current97815090562622-s2.0-85019254367https://hdl.handle.net/10361/29257This paper introduces a detailed study of minority carrier lifetime dependence into switching power loss calculation of Non-Punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for modeling the minority carrier concentration within the base. In virtue of this new expression an analytical model has been developed for transient turn-off voltage and current of IGBT in all minority carrier lifetime conditions. Better consistency with the practical results has been found for this parabolic model compared to the previously used linear model. Finally, the implications of carrier lifetime dependence on the calculation of switching power loss have been discussed.79-82en-USMinority carrier lifetimeParabolic approximationSwitching power lossTransient anode voltageTransient currentPower semiconductors.Insulated gate bipolar transistors.Conference Proceeding10.1109/ECACE.2017.7912883