Rahman, TowfiqurKhan, Antara FairoozNawal, Nowshin2026-09-072026-09-072019-05-01T. Rahman, A. F. Khan and N. Nawal, "Analysis of NCFET with Si Doped HfO2 as Ferro-Electric Material to Achieve Lower SS," 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT), Dhaka, Bangladesh, 2019, pp. 1-6, doi: 10.1109/ICASERT.2019.8934575.97817281344512-s2.0-85077986000https://hdl.handle.net/10361/29789By using ferroelectric material as gate insulator in MOSFET (NCFET), Sub-Threshold Swing can be reduced below the fundamental limit of 60mV per decade. Achieving the negative capacitance depends on the ability to drive ferro- electricity away from its local minimum to non-equilibrium state which is very unstable. It can be stabilized by adding a series capacitance. Hence, a ferroelectric capacitor in a series connection with a channel capacitor can be made to model a ferroelectric MOS capacitor to get a steeper Id-Vgs curve than a regular MOSFET.6 Pagesen-USCapacitanceMOSFETLogic gatesIronHafnium compoundsInsulatorsCapacitorsNegative capacitance MOSFETFerroelectricHafnium oxideMetal oxide semiconductors field-effect transistors.Ferroelectricity.Conference Proceeding10.1109/ICASERT.2019.8934575