Rhaman, Dr. Md. KhalilurShakil, Shifur RahmanAli, Abrar MohammadGharami, DevleenaMimi, Niger Sultana2018-01-222018-01-2220172017-12ID 13301008ID 13121121ID 13121132http://hdl.handle.net/10361/9133Cataloged from PDF version of thesis.Includes bibliographical references (page 66-67).This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.Two Dimensional (2D) Graphene NanoRibbon (GNR) based devices have grabbed the attention of scientists associated with different fields of science and technology due to their unique structural, mechanical and electronic properties. The potential uses of those materials can be for chemical vapor sensors, photo sensors, high performance photo detectors and field effect transistor. Our research is characterized by modelling graphene devices and differing their atomic level width. Next, we observed the induced quantum transport properties and their effects in nanoscale semiconductor devices. Moreover, we analyzed the molecular adsorption process on graphene and observed the changes in sensor properties. The simulated results are then implemented in the circuit simulation to evaluated the quantum mechanical robustness of the classical functionality of digital circuits designed by the modern nanotechnology.67 pages67 pagesenBRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.Graphene NanoRibbonTwo DimensionalNanotechnologyAb InitioH 2 O molecules adsorptionSemiconducting GNRThesis