Das, AvijitIslam, Md. AkhirulHossain, MD. NazmulAltab, M. MubaswirBhowmik, Tonmoy2017-08-212017-08-2120172017ID 12121114ID 12321066ID 12321067ID 12321068http://hdl.handle.net/10361/8419Cataloged from PDF version of thesis.This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.Analysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT). Changing the Doping concentration, gate voltage and collector to emitter voltage along with different temperature in punch through IGBT we compared different collector currents.85 pagesenBRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.IGBTHefner modelThesis