Das, AvijitSaif, OmarPavel, Md. Fazle RabbiHasan, Md. AkibShah, Asif2017-12-192017-12-1920178/20/2017ID 13121051ID 13121069ID 13121100ID 14221027http://hdl.handle.net/10361/8640Cataloged from PDF version of thesis.Includes bibliographical references (page 72).This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new physical-base model for a punch though (PT) IGBT. By manipulating the different region length, depth and doping we will try to obtain better threshold and I-V relation regarding IGBT characteristics and make a new extended model with proper research on its transient characteristics.102 pagesenBRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.IGBTMOSFET structurePunch Through (PT)bipolar Junction Transistor (BJT).Thesis