Saha, GobindaSaha, Atanu KumarHarun-Ur Rashid, A.B.M.2026-07-262026-07-262015-01-01G. Saha, A. K. Saha and A. B. M. Harun-ur Rashid, "Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons," 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), Rome, Italy, 2015, pp. 440-443, doi: 10.1109/NANO.2015.7388632.97814673815502-s2.0-84964378575https://hdl.handle.net/10361/28642In this paper double quantum well resonant tunneling negative differential resistance (NDR) device based on intrinsic armchair graphene nanoribbon (A-GNR) is proposed. Non-equilibrium Green's function (NEGF) based transport equation was coupled with Poisson's equation to obtain the desired device characteristics. This device shows promising results including the NDR effect at very low bias, at 0.12V, with peak current of 1.78?A and peak to valley current ratio (PVCR) of ?20. We further show that the device performance has strong dependence on back gate voltage.440-443en-USfalseGraphene nanoribbonNDRNEGFQuantum wellResonant tunnelingNanotechnology.Industrial engineering.Electronic circuits.Quantum wells.Field-effect transistors.Conference Proceeding10.1109/NANO.2015.7388632