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Investigation into IGBT transient characteristics and calculation of switching power loss

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Files

12121113, 12121167 & 11321033_EEE.pdf (3.33 MB)

Date

4/19/2016

Publisher

BRAC University

Authors

Full item page

URI

http://hdl.handle.net/10361/7717

Citation

Abstract

In many power converter applications, analysis of switching power loss of IGBT is considered desirable. In our thesis, the switching behavior is analyzed through investigation into transient anode voltage modeling of Non-Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT).Parabolic Profile for excess carrier concentration has been compared with the linear one in the baser. With the comparison, Transient turn-off anode voltage is analyzed through parabolic and linear approach. Finally transient switching power loss is estimated through the incorporation of transient current.

Keywords

IGBT transient, Switching power, Non-punch through (NTP)

Description

Cataloged from PDF version of thesis report.
Includes bibliographical references (page 72-74).
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Computer Science and Engineering, 2016.

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Department

Department of Electrical and Electronic Engineering

Type

Thesis

Collections

Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)