Analytical model of GaN MESFETs for high power and microwave frequency applications

Simple item page
bracu.type.groupResearch Publications
datacite.rightsMetadata Only
dc.contributor.authorShanta, A.S.
dc.contributor.authorHossain, D.B.
dc.contributor.authorHuq, T.R.
dc.contributor.authorMahmood, R.
dc.contributor.authorIslam, M.S.
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2026-07-26T06:48:33Z
dc.date.available2026-07-26T06:48:33Z
dc.date.issued2012-11-23
dc.description.abstractA simple physics based model for Gallium Nitride (GaN) Metal Semiconductor Field Effect Transistor (MESFET) suitable for microwave frequency applications is presented. The developed analytical channel potential model can be used for short channel MESFETs with some modifications and assumptions. Analytical models for I-V characteristics, C-V characteristics, transconductance and optimum noise figure of GaN MESFET are presented. The effects of parasitic resistances and gate length modulation on these models have been studied. The models developed in this paper will be very helpful to understand the device behavior in nanometer regime for future applications.
dc.description.versionPublished
dc.format.extent28-31
dc.identifier.citationA. S. Shanta, D. B. Hossain, T. R. Huq, R. Mahmood and M. S. Islam, "Analytical model of GaN MESFETs for high power and microwave frequency applications," 2012 International Symposium on Instrumentation & Measurement, Sensor Network and Automation (IMSNA), Sanya, China, 2012, pp. 28-31, doi: 10.1109/MSNA.2012.6324509.
dc.identifier.doi10.1109/MSNA.2012.6324509
dc.identifier.issn9781467324670
dc.identifier.urihttps://hdl.handle.net/10361/28634
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.hasversion10.1109/MSNA.2012.6324509
dc.relation.ispartofProceedings 2012 International Symposium on Instrumentation and Measurement Sensor Network and Automation Imsna 2012
dc.relation.ispartofseriesProceedings 2012 International Symposium on Instrumentation and Measurement Sensor Network and Automation Imsna 2012
dc.relation.urihttps://ieeexplore.ieee.org/document/6324509
dc.rightsfalse
dc.subjectAnalytical model
dc.subjectGaN
dc.subjectMESFET
dc.subject.lcshMicrowave devices.
dc.subject.lcshFrequency synthesizers.
dc.titleAnalytical model of GaN MESFETs for high power and microwave frequency applications
dc.typeConference Proceeding
oaire.citation.volume1
person.affiliation.nameBRAC University
person.affiliation.nameBRAC University
person.affiliation.nameBRAC University
person.affiliation.nameBRAC University
person.affiliation.nameBangladesh University of Engineering and Technology
person.identifier.scopus-author-id57192092882
person.identifier.scopus-author-id57213838404
person.identifier.scopus-author-id55487367100
person.identifier.scopus-author-id57224613091
person.identifier.scopus-author-id58018474000

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Demo.jpg
Size:
27.28 KB
Format:
Joint Photographic Experts Group/JPEG File Interchange Format (JFIF)
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Scholarly Indexed Publications