Minority carrier lifetime dependence into switching power loss calculation of IGBT

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bracu.type.groupResearch Publications
datacite.rightsMetadata Only
dc.contributor.authorBristy, Nigar Sultana
dc.contributor.authorMustary, Sharmin
dc.contributor.authorHasan, Rifatul
dc.contributor.authorDas A.
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2026-08-18T10:39:15Z
dc.date.available2026-08-18T10:39:15Z
dc.date.issued2017-04-26
dc.description.abstractThis paper introduces a detailed study of minority carrier lifetime dependence into switching power loss calculation of Non-Punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for modeling the minority carrier concentration within the base. In virtue of this new expression an analytical model has been developed for transient turn-off voltage and current of IGBT in all minority carrier lifetime conditions. Better consistency with the practical results has been found for this parabolic model compared to the previously used linear model. Finally, the implications of carrier lifetime dependence on the calculation of switching power loss have been discussed.
dc.description.versionPublished
dc.format.extent79-82
dc.identifier.citationCharge carrier lifetime;Insulated gate bipolar transistors;Transient analysis;Switches;Anodes;Mathematical model;Predictive models;Switching Power Loss;Minority Carrier Lifetime;Parabolic Approximation;Transient Anode Voltage;Transient Current
dc.identifier.doi10.1109/ECACE.2017.7912883
dc.identifier.issn9781509056262
dc.identifier.other2-s2.0-85019254367
dc.identifier.urihttps://hdl.handle.net/10361/29257
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.hasversion10.1109/ECACE.2017.7912883
dc.relation.ispartofEcce 2017 International Conference on Electrical Computer and Communication Engineering
dc.relation.ispartofseriesEcce 2017 International Conference on Electrical Computer and Communication Engineering
dc.relation.urihttps://ieeexplore.ieee.org/document/7912883
dc.subjectMinority carrier lifetime
dc.subjectParabolic approximation
dc.subjectSwitching power loss
dc.subjectTransient anode voltage
dc.subjectTransient current
dc.subject.lcshPower semiconductors.
dc.subject.lcshInsulated gate bipolar transistors.
dc.titleMinority carrier lifetime dependence into switching power loss calculation of IGBT
dc.typeConference Proceeding
person.affiliation.nameBRAC University
person.affiliation.nameBRAC University
person.affiliation.nameBRAC University
person.affiliation.nameBRAC University
person.identifier.scopus-author-id57194210350
person.identifier.scopus-author-id57194206001
person.identifier.scopus-author-id57194217099
person.identifier.scopus-author-id59036808800

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