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Transient anode voltage modeling of IGBT and its base doping profile investigation

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dc.contributor.authorDas, Avijit
dc.contributor.authorMd Ziaur Rahman, Khan
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2016-11-22T06:35:37Z
dc.date.available2016-11-22T06:35:37Z
dc.date.issued2015-12
dc.descriptionThis conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICCITechn.2015.7488054en_US
dc.description.abstractIn many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through investigation into transient anode voltage modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for derivation of minority carrier concentration within the base. With the derived expression, an analytical model has been developed for turn-off anode voltage of IGBT in all doping profile conditions. Better agreements with the experimental results have been found compared to the previously used linear model. Finally, the implications of base doping dependence on the anode voltage are discussed, including implementation of such a doping concentration estimation techniqueen_US
dc.identifier.citationDas, A., & Khan, M. Z. R. (2015). Transient anode voltage modeling of IGBT and its base doping profile investigation. Paper presented at the 2015 18th International Conference on Computer and Information Technology, ICCIT 2015, 122-126. doi:10.1109/ICCITechn.2015.7488054en_US
dc.identifier.doi10.1109/ICCITechn.2015.7488054
dc.identifier.isbn978-146739930-2
dc.identifier.urihttp://hdl.handle.net/10361/6900
dc.language.isoenen_US
dc.publisher© 2015 Institute of Electrical and Electronics Engineers Inc.en_US
dc.subjectBase doping concentrationen_US
dc.subjectCarrier storage regionen_US
dc.subjectMinority carrier lifetimeen_US
dc.subjectParabolic approximationen_US
dc.subjectTransient anode voltageen_US
dc.titleTransient anode voltage modeling of IGBT and its base doping profile investigationen_US
dc.typeConference Paperen_US

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