Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR

Abstract

Two Dimensional (2D) Graphene NanoRibbon (GNR) based devices have grabbed the attention of scientists associated with different fields of science and technology due to their unique structural, mechanical and electronic properties. The potential uses of those materials can be for chemical vapor sensors, photo sensors, high performance photo detectors and field effect transistor. Our research is characterized by modelling graphene devices and differing their atomic level width. Next, we observed the induced quantum transport properties and their effects in nanoscale semiconductor devices. Moreover, we analyzed the molecular adsorption process on graphene and observed the changes in sensor properties. The simulated results are then implemented in the circuit simulation to evaluated the quantum mechanical robustness of the classical functionality of digital circuits designed by the modern nanotechnology.