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Transient switch-on collector current analysis in punch-through IGBT

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Files

12121114, 12321066, 12321067, 12321067_EEE.pdf (2.17 MB)

Date

2017

Publisher

BRAC University

Authors

Full item page

URI

http://hdl.handle.net/10361/8419

Citation

Abstract

Analysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT). Changing the Doping concentration, gate voltage and collector to emitter voltage along with different temperature in punch through IGBT we compared different collector currents.

Keywords

IGBT, Hefner model

Description

Cataloged from PDF version of thesis.
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

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Department

Department of Electrical and Electronic Engineering

Type

Thesis

Collections

Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)