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Transient anode voltage modeling of IGBT and its carrier lifetime dependence

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dc.contributor.authorDas, Avijit
dc.contributor.authorIslam, Nazmul
dc.contributor.authorHaq, Masud Ul
dc.contributor.authorKhan, Ziaurrahman
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.date.accessioned2018-04-17T05:53:45Z
dc.date.available2018-04-17T05:53:45Z
dc.date.issued2015-11
dc.descriptionThis conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sands Cotai CentralMacau; Macau; 1 November 2015 through 4 November 2015 [© 2015 IEEE] and the definite version is available at : http://doi.org/10.1109/TENCON.2015.7372970 The Journal's website is at: https://ieeexplore.ieee.org/document/7372970/en_US
dc.description.abstractThis work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base. With the help of derived expression, an analytical model has been developed for turn-off voltage of IGBT in all minority carrier lifetime conditions. Better agreements with experimental data have been found compared to the linear model generally used. Finally, the implications of carrier lifetime dependence on the anode voltage are discussed, including implementation of such a carrier lifetime measurement technique.en_US
dc.description.versionPublished
dc.identifier.citationDas, A., Islam, N., Haq, M. -., & Khan, Z. R. (2016). Transient anode voltage modeling of IGBT and its carrier lifetime dependence. Paper presented at the IEEE Region 10 Annual International Conference, Proceedings/TENCON, , 2016-January doi:10.1109/TENCON.2015.7372970en_US
dc.identifier.doihttp://doi.org/10.1109/TENCON.2015.7372970
dc.identifier.isbn978-147998641-5
dc.identifier.issn21593442
dc.identifier.urihttp://hdl.handle.net/10361/9886
dc.language.isoenen_US
dc.publisher© 2015 IEEEen_US
dc.relation.urihttps://ieeexplore.ieee.org/document/7372970/
dc.subjectCarrier lifetime controlen_US
dc.subjectEffective base widthen_US
dc.subjectMinority carrier lifetimeen_US
dc.subjectParabolic approximationen_US
dc.subjectTransient Anode Voltageen_US
dc.titleTransient anode voltage modeling of IGBT and its carrier lifetime dependenceen_US
dc.typeConference Paperen_US

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