| dc.contributor.advisor | Das, Avijit | |
| dc.contributor.author | Saif, Omar | |
| dc.contributor.author | Pavel, Md. Fazle Rabbi | |
| dc.contributor.author | Hasan, Md. Akib | |
| dc.contributor.author | Shah, Asif | |
| dc.date.accessioned | 2017-12-19T05:11:28Z | |
| dc.date.available | 2017-12-19T05:11:28Z | |
| dc.date.copyright | 2017 | |
| dc.date.issued | 2017-08-20 | |
| dc.identifier.other | ID 13121051 | |
| dc.identifier.other | ID 13121069 | |
| dc.identifier.other | ID 13121100 | |
| dc.identifier.other | ID 14221027 | |
| dc.identifier.uri | http://hdl.handle.net/10361/8640 | |
| dc.description | This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017. | en_US |
| dc.description | Cataloged from PDF version of thesis. | |
| dc.description | Includes bibliographical references (page 72). | |
| dc.description.abstract | The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a
wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new
physical-base model for a punch though (PT) IGBT. By manipulating the different region length,
depth and doping we will try to obtain better threshold and I-V relation regarding IGBT
characteristics and make a new extended model with proper research on its transient
characteristics. | en_US |
| dc.description.statementofresponsibility | Omar Saif | |
| dc.description.statementofresponsibility | Md. Fazle Rabbi Pavel | |
| dc.description.statementofresponsibility | Md. Akib Hasan | |
| dc.description.statementofresponsibility | Asif Shah | |
| dc.format.extent | 102 pages | |
| dc.language.iso | en | en_US |
| dc.publisher | BRAC University | en_US |
| dc.rights | BRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. | |
| dc.subject | IGBT | en_US |
| dc.subject | MOSFET structure | en_US |
| dc.subject | Punch Through (PT) | en_US |
| dc.subject | bipolar Junction Transistor (BJT). | en_US |
| dc.title | An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.department | Department of Electrical and Electronic Engineering, BRAC University | |
| dc.description.degree | B. Electrical and Electronic Engineering
| |
