An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

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Date
2017-08-20
Publisher
BRAC University
Author
Saif, Omar
Pavel, Md. Fazle Rabbi
Hasan, Md. Akib
Shah, Asif
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URI
http://hdl.handle.net/10361/8640
Abstract
The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new physical-base model for a punch though (PT) IGBT. By manipulating the different region length, depth and doping we will try to obtain better threshold and I-V relation regarding IGBT characteristics and make a new extended model with proper research on its transient characteristics.
Keywords
IGBT; MOSFET structure; Punch Through (PT); bipolar Junction Transistor (BJT).
 
Description
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
 
Cataloged from PDF version of thesis.
 
Includes bibliographical references (page 72).
Department
Department of Electrical and Electronic Engineering, BRAC University
Type
Thesis
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