Investigation into IGBT transient characteristics and calculation of switching power loss

Abstract

In many power converter applications, analysis of switching power loss of IGBT is considered desirable. In our thesis, the switching behavior is analyzed through investigation into transient anode voltage modeling of Non-Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT).Parabolic Profile for excess carrier concentration has been compared with the linear one in the baser. With the comparison, Transient turn-off anode voltage is analyzed through parabolic and linear approach. Finally transient switching power loss is estimated through the incorporation of transient current.