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Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths
(© 2015 The Institution of Engineering and Technology., 2015)
Currently, the advancement of silicon transistor technology is being hindered by different issues such as scaling limits. It has become imperative to replace existing silicon technology with new technology to continue the ...