Show simple item record

dc.contributor.authorAhmed, Sheikh Ziauddin
dc.contributor.authorShawkat, Mashiyat Sumaiya
dc.contributor.authorChowdhury, Md Iramul Hoque
dc.date.accessioned2016-11-27T11:00:28Z
dc.date.available2016-11-27T11:00:28Z
dc.date.issued2015
dc.identifier.citationAhmed, S., Shawkat, M., Chowdhury, M. I., & Mominuzzaman, S. (2015). Gate dielectric material dependence of current-voltage characteristics of ballistic schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths. Micro and Nano Letters, 10(10), 523-527. doi:10.1049/mnl.2015.0193en_US
dc.identifier.issn17500443
dc.identifier.urihttp://hdl.handle.net/10361/6996
dc.descriptionThis article was published in Micro and Nano Letters [© 2015 Published by The Institution of Engineering and Technology] and the definite version is available at: http://doi.org/10.1049/mnl.2015.0193en_US
dc.description.abstractCurrently, the advancement of silicon transistor technology is being hindered by different issues such as scaling limits. It has become imperative to replace existing silicon technology with new technology to continue the scaling of MOSFETs. Thus, new materials and new production techniques are being studied laboriously to continue the trend set by Moore's Law. The graphene nanoribbon (GNR) and the carbon nanotube (CNT) are two such promising materials that can replace silicon in future MOSFETs. A study has been conducted of the effect of the relative dielectric constant on the device performances of a ballistic Schottky barrier GNR field-effect transistor (GNRFET) and a CNT field-effect transistor (CNTFET) for two different channel lengths and a comparative analysis between the two transistors is provided. When a gate material with a high relative dielectric constant is used in FETs, it has been observed that both the transistors show higher on-state drain currents for the different channel lengths. Moreover, the on and off-state current ratios and transconductance for the GNRFET and the CNTFET are calculated and plotted for further differentiation between the performances of the GNRFET and the CNTFET.en_US
dc.language.isoenen_US
dc.publisher© 2015 The Institution of Engineering and Technology.en_US
dc.relation.urihttp://doi.org/10.1049/mnl.2015.0193
dc.titleGate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengthsen_US
dc.typeArticleen_US
dc.description.versionPublished
dc.contributor.departmentDepartment of Electrical and Electronic Engineering


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record