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dc.contributor.authorSaha, Atanukumar
dc.contributor.authorSaha, Gobinda
dc.contributor.authorRashid, A.B. M Harun Ur
dc.date.accessioned2016-11-24T08:56:21Z
dc.date.available2016-11-24T08:56:21Z
dc.date.issued2015
dc.identifier.citationSaha, A. K., Saha, G., & Rashid, A. B. M. H. -. (2015). Numerical study on graphene nanoribbon quantum well-in-well interband and intersubband photodetector. Paper presented at the IEEE-NANO 2015 - 15th International Conference on Nanotechnology, 397-400. doi:10.1109/NANO.2015.7389010en_US
dc.identifier.isbn978-146738155-0
dc.identifier.urihttp://hdl.handle.net/10361/6968
dc.descriptionThis conference paper was presented in the 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015; Rome; Italy; 27 July 2015 through 30 July 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NANO.2015.7389010en_US
dc.description.abstractThe optical properties of well in well structure formed by armchair graphene nanoribbons (A-GNRs) are studied. A-GNR sheet is modeled by 3rd nearest tight-binding parameter. The optical properties are studied by employing the self-consistent simulation between Non-equilibrium Green's function method and electrostatic Hartree potential distribution. The proposed device structure can incorporate both of the interband and intersubband transitions depending on a back gate voltage. The optical absorption frequency can be varied through the back gate voltage. The confined energy states and quantum efficiency of the device have been determined along with the dark current dependence on the bias voltages.en_US
dc.language.isoenen_US
dc.publisher© 2015 Institute of Electrical and Electronics Engineers Inc.en_US
dc.subjectGNRen_US
dc.subjectInterbanden_US
dc.subjectIntersubbanden_US
dc.subjectPhotodetectoren_US
dc.subjectQuantum well-in-wellen_US
dc.titleNumerical study on graphene nanoribbon quantum well-in-well interband and intersubband photodetectoren_US
dc.typeConference Paperen_US
dc.contributor.departmentDepartment of Electrical and Electronic Engineering
dc.identifier.doi10.1109/NANO.2015.7389010


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