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Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material ... -
Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device
(© 2016 Institute of Electrical and Electronics Engineers Inc., 2015)Sensing properties and quasi conductivity of Graphene Armchair Nanoribbon/MoS2 heterostructure devices are investigated using Non Equilibrium Green's Function (NEGF) formalism. Both metallic and semiconducting Armchair ...