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Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths
(© 2015 The Institution of Engineering and Technology., 2015)
Currently, the advancement of silicon transistor technology is being hindered by different issues such as scaling limits. It has become imperative to replace existing silicon technology with new technology to continue the ...
Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device
(© 2016 Institute of Electrical and Electronics Engineers Inc., 2015)
Sensing properties and quasi conductivity of Graphene Armchair Nanoribbon/MoS2 heterostructure devices are investigated using Non Equilibrium Green's Function (NEGF) formalism. Both metallic and semiconducting Armchair ...
Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material ...