Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device

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Date
2015
Publisher
© 2016 Institute of Electrical and Electronics Engineers Inc.
Author
Shakil, Shifur Rahman
Ahmed, Sheikh Ziauddin
Metadata
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URI
http://hdl.handle.net/10361/6936
Citation
Shakil, S. R., & Ahmed, S. Z. (2015). Donor/acceptor and adsorbate effects over transport properties of graphene armchair Nanoribbon/MoS2 device. Paper presented at the IEEE-NANO 2015 - 15th International Conference on Nanotechnology, 334-337. doi:10.1109/NANO.2015.7388993
Abstract
Sensing properties and quasi conductivity of Graphene Armchair Nanoribbon/MoS2 heterostructure devices are investigated using Non Equilibrium Green's Function (NEGF) formalism. Both metallic and semiconducting Armchair Graphene Nanoribbon (A-GNR) are used as sensing medium, while two dimensional (2D) molybdenum disulfide (MoS2) is used as contacts. A comparative study about sensing performance of NH3 adsorbed pristine-, defect-, doped GNR and unadsorbed GNR has been carried out. The non-linear spin dependent transport properties of such devices have been studied on the basis of doping with an atom of group III & V elements. The effects of applied gate voltage over sensing properties have been observed extensively. Also in this literature, the effects of metal contacts are discussed and a new device model has been proposed to increase sensing properties.
Keywords
Electronic transport properties; GNR; MoS2; NEGF; Sensing properties
 
Description
This conference paper was presented in the 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015; Rome; Italy; 27 July 2015 through 30 July 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NANO.2015.7388993
DOI
10.1109/NANO.2015.7388993
Department
Department of Electrical and Electronic Engineering
Type
Conference Paper
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