Saif, Omar; Pavel, Md. Fazle Rabbi; Hasan, Md. Akib; Shah, Asif (BRAC University, 2017-08-20)
The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a
wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new
physical-base model for a punch though ...