Avijit Das

 

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  • Transient anode voltage modeling of IGBT and its carrier lifetime dependence 

    Das, Avijit; Islam, Nazmul; Haq, Masud Ul; Khan, Ziaurrahman (© 2015 IEEE, 2015-11)
    This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation ...

  • Transient anode voltage modeling of IGBT and its base doping profile investigation 

    Das, Avijit; Md Ziaur Rahman, Khan (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015-12)
    In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through ...