I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

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Date
2016-08-17
Publisher
BRAC University
Author
Ahmed, Saber
Sobhan, Rifat Binte
Metadata
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URI
http://hdl.handle.net/10361/6425
Abstract
In this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).
Keywords
I-V Characteristics; Negative Differential Resistance (NDR); Resonant Tunneling Diodes (RTD)
 
Description
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
 
Cataloged from PDF version of thesis report.
 
Includes bibliographical references (page 46-47).
Department
Department of Electrical and Electronic Engineering, BRAC University
Type
Thesis
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