Browsing BSRM School of Engineering by Subject "IGBT"
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An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
(BRAC University, 2017-08-20)The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new physical-base model for a punch though ... -
Transient switch-on collector current analysis in punch-through IGBT
(BRAC Univeristy, 2017)Analysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar ...