Sheikh Ziauddin Ahmed
http://hdl.handle.net/10361/6937
2024-03-29T12:37:28Z
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Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
http://hdl.handle.net/10361/7007
Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
Ahmed, Sheikh Ziauddin; Shawkat, Mashiyat Sumaiya; Chowdhury, Md Iramul Hoque; Mominuzzaman, Sharif Mohammad
Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material issues which hinder the development of transistor technology. In this paper, the effect of relative dielectric constant on the performances of ballistic schottky barrier Graphene Nanoribbon field-effect transistor (GNRFET) and Carbon Nanotube field-effect transistor (CNTFET) is studied and a comparative analysis between the two transistors is provided. It has been observed that using a gate material with higher relative dielectric constant leads to a higher on-state drain current for both the transistors. However, CNTFET has higher on-state drain current compared to GNRFET. Also in this literature, the on and off-state current ratios of both the transistors are calculated and plotted to further differentiate between the performances of GNRFET and CNTFET.
This conference paper was presented in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015; Xi'an; China; 7 April 2015 through 11 April 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NEMS.2015.7147449
2015-01-01T00:00:00Z
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Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths
http://hdl.handle.net/10361/6996
Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths
Ahmed, Sheikh Ziauddin; Shawkat, Mashiyat Sumaiya; Chowdhury, Md Iramul Hoque
Currently, the advancement of silicon transistor technology is being hindered by different issues such as scaling limits. It has become imperative to replace existing silicon technology with new technology to continue the scaling of MOSFETs. Thus, new materials and new production techniques are being studied laboriously to continue the trend set by Moore's Law. The graphene nanoribbon (GNR) and the carbon nanotube (CNT) are two such promising materials that can replace silicon in future MOSFETs. A study has been conducted of the effect of the relative dielectric constant on the device performances of a ballistic Schottky barrier GNR field-effect transistor (GNRFET) and a CNT field-effect transistor (CNTFET) for two different channel lengths and a comparative analysis between the two transistors is provided. When a gate material with a high relative dielectric constant is used in FETs, it has been observed that both the transistors show higher on-state drain currents for the different channel lengths. Moreover, the on and off-state current ratios and transconductance for the GNRFET and the CNTFET are calculated and plotted for further differentiation between the performances of the GNRFET and the CNTFET.
This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Engineering and Technology] and the definite version is available at: http://doi.org/10.1049/mnl.2015.0193
2015-01-01T00:00:00Z
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Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device
http://hdl.handle.net/10361/6936
Donor/acceptor and adsorbate effects over transport properties of Graphene Armchair Nanoribbon/MoS2 device
Shakil, Shifur Rahman; Ahmed, Sheikh Ziauddin
Sensing properties and quasi conductivity of Graphene Armchair Nanoribbon/MoS2 heterostructure devices are investigated using Non Equilibrium Green's Function (NEGF) formalism. Both metallic and semiconducting Armchair Graphene Nanoribbon (A-GNR) are used as sensing medium, while two dimensional (2D) molybdenum disulfide (MoS2) is used as contacts. A comparative study about sensing performance of NH3 adsorbed pristine-, defect-, doped GNR and unadsorbed GNR has been carried out. The non-linear spin dependent transport properties of such devices have been studied on the basis of doping with an atom of group III & V elements. The effects of applied gate voltage over sensing properties have been observed extensively. Also in this literature, the effects of metal contacts are discussed and a new device model has been proposed to increase sensing properties.
This conference paper was presented in the 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015; Rome; Italy; 27 July 2015 through 30 July 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NANO.2015.7388993
2015-01-01T00:00:00Z