Browsing by Author "Hassan, Asif S."

Now showing items 1-6 of 6

    • Analysis of quantum capacitance and quantum hall effect of silicene for different fermi energy 

      Hasan, Rifat; Hassan, Asif S.; Abedin, Minhaz Ibna; Mondol, Raktim Kumar (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
      Silicene is a monolayer of silicon which is again an isostructure to graphene. Due to zero bandgap of graphene, it is now subsided by silicene which opens new opportunities for electrically tunable electronic devices. But ...

    • Hardware architecture design of face recognition system based on FPGA 

      Mondol, Raktim Kumar; Khan, Muhammadimran; Mahbubul, Hye, A. K.; Hassan, Asif S. (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
      A novel hardware architecture for face-recognition system has been proposed in this paper. In order to make the system cost effective a simple yet efficient algorithm of face-recognition system has been used. We have ...

    • Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect 

      Mondol, Raktim Kumar; Hassan, Asif S.; Hasan, Rifat (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
      Armchair Graphene nanoribbons(A-GNRs) are now widely used in nanoscale transistor because of its semiconducting behavior and fast switching speed. The most important parameter which impedes carrier movement through the ...

    • Simulation of carrier mobility through Graphene Nanoribbon based DNA sensor 

      Hasan, Rifat; Nandy, Turja; Abedin, Minhaz Ibna; Hassan, Asif S.; Mondol, Raktim Kumar (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
      Graphene Nanoribbons (GNRs), now-a-days, are used in detecting Deoxyribonucleic Acid (DNA) which is one of the breakthroughs in modern nanobiomaterial and biomedical applications. The conductance is calculated by transferring ...

    • Simulation of saturation current in In1-xGaxSb based solar cell 

      Hassan, Asif S.; Mondol, Raktim Kumar; Jafar, Imran Bin (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
      After the golden era of silicon, nowadays compound semiconductors from III-V group is extensively studied to observe their application in electronic as well as in other field. Solar cell which is providing alternative ...

    • Theoretical modeling of current measurement in nanoscale device considering Green's function formalism 

      Hassan, Asif S.; Mondol, Raktim Kumar; Jafar, Imran Bin; Shahin, Md Zahidul Islam (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015)
      In recent years there are various way of predicting the current measurement through nanoscale device has been established. One of the most widely used and accepted is non-equilibrium Green's function method (NEGF). After ...