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dc.contributor.advisorRhaman, Dr. Md. Khalilur
dc.contributor.advisorShakil, Shifur Rahman
dc.contributor.authorAli, Abrar Mohammad
dc.contributor.authorGharami, Devleena
dc.contributor.authorMimi, Niger Sultana
dc.date.accessioned2018-01-22T08:55:05Z
dc.date.available2018-01-22T08:55:05Z
dc.date.copyright2017
dc.date.issued2017-12
dc.identifier.otherID 13301008
dc.identifier.otherID 13121121
dc.identifier.otherID 13121132
dc.identifier.urihttp://hdl.handle.net/10361/9133
dc.descriptionThis thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.en_US
dc.descriptionCataloged from PDF version of thesis.
dc.descriptionIncludes bibliographical references (page 66-67).
dc.description.abstractTwo Dimensional (2D) Graphene NanoRibbon (GNR) based devices have grabbed the attention of scientists associated with different fields of science and technology due to their unique structural, mechanical and electronic properties. The potential uses of those materials can be for chemical vapor sensors, photo sensors, high performance photo detectors and field effect transistor. Our research is characterized by modelling graphene devices and differing their atomic level width. Next, we observed the induced quantum transport properties and their effects in nanoscale semiconductor devices. Moreover, we analyzed the molecular adsorption process on graphene and observed the changes in sensor properties. The simulated results are then implemented in the circuit simulation to evaluated the quantum mechanical robustness of the classical functionality of digital circuits designed by the modern nanotechnology.en_US
dc.description.statementofresponsibilityAbrar Mohammad Ali
dc.description.statementofresponsibilityDevleena Gharami
dc.description.statementofresponsibilityNiger Sultana Mimi
dc.format.extent67 pages
dc.format.extent67 pages
dc.language.isoenen_US
dc.publisherBARC Universityen_US
dc.rightsBRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subjectGraphene NanoRibbonen_US
dc.subjectTwo Dimensionalen_US
dc.subjectNanotechnologyen_US
dc.subjectAb Initioen_US
dc.subjectH 2 O molecules adsorptionen_US
dc.subjectSemiconducting GNRen_US
dc.titleSimulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNRen_US
dc.typeThesisen_US
dc.contributor.departmentDepartment of Electrical and Electronic Engineering, BRAC University
dc.description.degreeB. Electrical and Electronic Engineering 


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